Search results for "radiation-induced attenuation"
showing 10 items of 10 documents
Bleaching of optical activity induced by UV Laser exposure in natural silica
2004
We report experimental data on two types of natural silica, differing for their OH content, irradiated with UV photons (4.66 eV) from a pulsed Nd:YAG laser. Irradiation induces a reduction of the absorption band at 5.12eV and of the associated emissions at 3.14eV and 4.28eV, ascribed to twofold coordinated Ge (=Ge'') centers pre-existing in our samples. The bleaching is mainly due to the post-irradiation conversion of =Ge'' into the paramagnetic H(II) center via trapping of a H atom. Comparison with literature data points out the peculiarities of silica with a low Ge concentration as regards UV induced transformations.
UV-Photoinduced Defects In Ge-Doped Optical Fibers
2005
We investigated the effect of continuous-wave (cw) UV laser radiation on single-mode Ge-doped H2- loaded optical fibers. An innovative technique was developed to measure the optical absorption (OA) induced in the samples by irradiation, and to study its dependence from laser fluence. The combined use of the electron spin resonance (ESR) technique allowed the structural identification of several radiation-induced point defects, among which the Ge(1) (GeO4 -) is found to be responsible of induced OA in the investigated spectral region.
Raman based distributed fiber optic temperature sensors for structural health monitoring in radiation environment
2015
Raman distributed temperature sensor (RDTS) measurements were performed during γ-radiation on three different classes of standard multimode fibers (pure, Ge-doped and F-doped). The sensor response is affected by the radiation induced attenuation phenomena leading to errors in the temperature measurements. The amplitude of this error strongly depends on the fiber type and the irradiation conditions. These results are promising in view of the integration of these RDTS into the deep geological repository for radioactive waste.
Photoluminescence in gamma-irradiated alpha-quartz investigated by synchrotron radiation
2004
Abstract We report an experimental investigation of the photoluminescence, under excitation by synchrotron radiation within the absorption band at 7.6 eV , induced in γ-irradiated α-quartz. Two emissions centered at 4.9 and 2.7 eV are observed at low temperature: the former decreases above 40 K , whereas the second band exhibits an initial slight increase and its quenching is effective above 100 K . Furthermore, the decay kinetics of both emissions occur in a time scale of nanoseconds: at T=17.5 K we measured a lifetime τ∼1.0 ns for the photoluminescence at 4.9 eV and τ∼3.6 ns for that at 2.7 eV . These results give new insight on the optical properties associated with defects peculiar of c…
Spectral heterogeneity of oxygen-deficient centers in Ge-doped silica
2004
Abstract We report an experimental investigation of the emission spectra of a 1000 mol ppm sol–gel Ge-doped silica by fine tuning the excitation energy in the ultraviolet (UV) range, around 5 eV , and in the vacuum-UV range, around 7.3 eV , at room temperature and at 10 K . The sample is characterized by a blue (centered at ∼3.2 eV ) and an UV (centered at ∼4.3 eV ) bands. We have found that the ratio between the area of the blue and the UV bands depends on the temperature and on the excitation energy in both the vacuum-UV and the UV range. At both temperatures the spectral features of the blue and the UV bands are weakly affected when the excitation is varied in the vacuum-UV. At variance,…
Optical properties and photosensitivity of vacuum synthesized Ge-doped sol-gel amorphous SiO/sub 2/
2005
We report optical and electron paramagnetic resonance investigations of gamma ray irradiation effects in sol-gel Ge-doped amorphous SiO/sub 2/. The studied materials have Ge-doping levels up to 10/sup 4/ molar part per million and were densified by two routes differing for the atmosphere: O/sub 2/+N/sub 2/ or vacuum. The obtained results evidence that irradiation affects matrix sites inducing paramagnetic defects. Furthermore, the comparison between the two densification procedures shows that vacuum atmosphere induces higher radiation sensitivity.
On-Line Characterization of Gamma Radiation Effects on Single-Ended Raman Based Distributed Fiber Optic Sensor
2016
We report distributed temperature measurements based on Raman scattering performed during steady state $\gamma $ -ray irradiation at a dose rate of 1 kGy( ${\rm SiO}_{2}$ )/h and up to a total ionizing dose (TID) of $\sim 0.1\ \hbox{MGy}$ . We characterize on-line the evolution of the performances of a single-ended Raman distributed temperature sensor (RDTS) during the $\gamma $ -ray exposure of different classes of commercial multimode fibers (MMFs) acting as the sensing element. RDTS is influenced by the radiation-induced attenuation (RIA) phenomena leading to both large errors in the temperature measurements and a diminution of the useful sensing length. The amplitude of the radiation-in…
Photoluminescence time decay of surface oxygen deficient centers in un‐doped and Ge‐doped silica
2005
We report a study of the emission decay from the singlet excited state of two fold coordinated Si and Ge centers stabilized on the surface of silica and Ge-doped silica. The PL lifetimes are of the order of nanoseconds and increase on decreasing the temperature. The results suggest that, for the surface centers, the phonon assisted intersystem-crossing process linking the excited states affects the decay rates, is effective down to low temperatures and is distributed because of the inhomogeneity of the defects. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Near‐IR Radiation‐Induced Attenuation of Aluminosilicate Optical Fibers
2021
The X-ray radiation-induced attenuation (RIA) growth kinetics are studied online in different single-mode aluminosilicate optical fibers in the near-IR (NIR) domain to evaluate their potential in terms of dosimetry. The optical fibers differ by Al contents, core sizes, drawing parameters, and also by a preform deposition process. The data show no dependence of the RIA on all these parameters, a positive result for the design of point or distributed radiation detectors exploiting RIA to monitor the dose. The RIA growth rate is unchanged for dose rates changing from 0.073 to 6.25 Gy(SiO2) s−1, and the RIA linearly increases with the dose up to 2 kGy(SiO2). Small but noticeable RIA changes are…
Properties of Gd-Doped Sol-Gel Silica Glass Radioluminescence under Electron Beams
2022
International audience; The radiation-induced emission (RIE) of Gd3+-doped sol–gel silica glass has been shown to have suitable properties for use in the dosimetry of beams of ionizing radiation in applications such as radiotherapy. Linear electron accelerators are commonly used as clinical radiotherapy beams, and in this paper, the RIE properties were investigated under electron irradiation. A monochromator setup was used to investigate the light properties in selected narrow wavelength regions, and a spectrometer setup was used to measure the optical emission spectra in various test configurations. The RIE output as a function of depth in acrylic was measured and compared with a reference…